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Phototransistors
PNA1801L (PN168)
Silicon NPN Phototransistor
Unit : mm
Not soldered 2.0 max.
For optical control systems Features
High sensitivity Wide spectral sensitivity, suited for detecting GaAs LEDs Small size, high output power, low cost ø 3 plastic package
15.0±1.0 4.5±0.3
ø3.8±0.2 ø3.0±0.2
5.0±0.2 0.6
2-0.8 max. 2-0.5±0.1 2 0.5±0.1
1.0
(1.5)
1 2.54
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 30 5 20 100 –25 to +85 –30 to +100 Unit V V mA mW ˚C ˚C
1.
PN168 Datasheet
