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PN115 - Silicon NPN Phototransistor

Features

  • High sensitivity Wide directional sensitivity, matched to GaAs LEDs : θ = 35 deg. (typ. ) Fast response : tr = 5 µs (typ. ) Side-view type package 4.5±0.3 Not soldered ø3.5±0.2 4.8±0.3 2.4 2.4 4.2±0.3 2.3 1.9 2.0 12.5 min. 10.0 min. 3-0.45±0.2 0.45±0.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature Storage tem.

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Datasheet Details

Part number PN115
Manufacturer Panasonic
File Size 60.75 KB
Description Silicon NPN Phototransistor
Datasheet download datasheet PN115 Datasheet

Full PDF Text Transcription

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Phototransistors PNZ115 (PN115) Silicon NPN Phototransistor Unit : mm For optical control systems Features High sensitivity Wide directional sensitivity, matched to GaAs LEDs : θ = 35 deg. (typ.) Fast response : tr = 5 µs (typ.) Side-view type package 4.5±0.3 Not soldered ø3.5±0.2 4.8±0.3 2.4 2.4 4.2±0.3 2.3 1.9 2.0 12.5 min. 10.0 min. 3-0.45±0.2 0.45±0.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VCBO VECO VEBO IC PC Topr Tstg Ratings 20 30 5 5 10 100 –25 to +85 –30 to +100 Unit V V V V mA mW ˚C ˚C 1 2 3 1.27 1.27 1.
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