Suitable for high-density mounting and downsizing of the equipment.
Contribute to low power consumption
1 2 1.00±0.05 3
0 to 0.02
(0.35) (0.35).
Basic Part Number.
UNR32A1 × 2
Display at No.1 lead
0.10
0.10.
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage te.
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Composite Transistors
NP062A1
Silicon NPN epitaxial planar type
Unit: mm
For digital circuits
6
0.12+0.03 -0.02 5 4
0.80±0.05 1.00±0.05
■ Features
• Two elements incorporated into one package • Suitable for high-density mounting and downsizing of the equipment • Contribute to low power consumption
1 2 1.00±0.05 3
0 to 0.02
(0.35) (0.35)
■ Basic Part Number
• UNR32A1 × 2
Display at No.1 lead
0.10
0.10
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 80 125 125 −55 to +125 Unit V V mA mW °C °C
1: Emitter (Tr1) 2: Emitter (Tr2) 3: Base (Tr2)
0.37+0.03 -0.
NP062A1 Datasheet
