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NP0G3D2 - Silicon PNP(NPN) epitaxial planar transistor

Features

  • to 0.02 1 2 3 0.10.
  • Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Collector to base voltage Collector to emitter voltage Collector current Tr2 Collector to base voltage Collector to emitter voltage Collector current Overall Total power dissipation.
  • Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg Rating.
  • 50.
  • 50.
  • 80 50 50 80 125 125.
  • 55 to +125 Unit V V mA V V mA mW °C °C 1: Base (Tr1) 2: Base (Tr2) 3: Emitter.

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Datasheet Details

Part number NP0G3D2
Manufacturer Panasonic
File Size 137.25 KB
Description Silicon PNP(NPN) epitaxial planar transistor
Datasheet download datasheet NP0G3D2 Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com Transistors with built-in Resistor NP0G3D2 Silicon PNP epitaxial planar transistor (Tr1) Silicon NPN epitaxial planar transistor (Tr2) Unit: mm For digital circuits 0.12+0.03 -0.02 6 5 4 0.80±0.05 (0.35) (0.35) 1.00±0.05 ■ Basic Part Number of Element • UNR31AT × UNR32AL Display at No.1 lead 0.10 • Two elements incorporated into one package • Suitable for high density package and downsizing of the equipment • Automatic insertion with the taping is possible 1.00±0.05 ■ Features 0 to 0.02 1 2 3 0.
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