LN58 Datasheet GaAs Infrared Light Emitting Diode

Manufacturer: Panasonic

Datasheet Details

Part number	LN58
Manufacturer	Panasonic
File Size	44.25 KB
Description	GaAs Infrared Light Emitting Diode
Download	LN58 Download (PDF)

Infrared Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode Unit : mm For optical control.

High-power output, high-efficiency : PO = 3.5 mW (typ. ) Emitted light spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ. ) Small size, thin side-view type package 3.9±0.3 Not soldered ø2.4 4.5±0.3 1.2 2.9±0.25 0.9 1.7±0.2 0.8 12.8 min. 2.8 2.4 1.5 2-1.2±0.3 2-0.45±0.15 1 2.54 R1.2 2 0.45±0.15 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operat.