LN58

The LN58 is GaAs Infrared Light Emitting Diode designed by Panasonic Semiconductor.

Product Overview

Panasonic Semiconductor

Part number	LN58
Manufacturer	Panasonic Semiconductor
File Size	44.25 KB
Description	GaAs Infrared Light Emitting Diode
Datasheet	LN58_PanasonicSemiconductor.pdf
Additional preview pages of the LN58 datasheet.

High-power output, high-efficiency : PO = 3.5 mW (typ. ) Emitted light spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ. ) Small size, thin side-view type package 3.9±0.3 Not soldered ø2.4 4.5±0.3 1.2 2.9±0.25 0.9 1.7±0.2 0.8 12.8 min. 2.8 2.4 1.5 2-1.2±0.3 2-0.45±0.15 1 2.54 R1.2 2 0.45±0.15 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operat.

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Published: Mar 22, 2005 |