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LN58 - GaAs Infrared Light Emitting Diode

LN58 Description

Infrared Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems .

LN58 Features

* High-power output, high-efficiency : PO = 3.5 mW (typ. ) Emitted light spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ. ) Small size, thin side-view type package 3.9±0.3 Not soldered ø2.4 4.5±0.3 1.2 2.9±0.25 0.9 1.7±0.2 0.8 12.8 min

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Datasheet Details

Part number
LN58
Manufacturer
Panasonic Semiconductor
File Size
44.25 KB
Datasheet
LN58_PanasonicSemiconductor.pdf
Description
GaAs Infrared Light Emitting Diode

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GaAs Infrared Light Emitting Diode Panasonic Semiconductor
Panasonic Semiconductor LN58-like datasheet