LN52 - GaAs Infrared Light Emitting Diode

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Panasonic Semiconductor

Part number	LN52
Manufacturer	Panasonic Semiconductor
File Size	44.78 KB
Description	GaAs Infrared Light Emitting Diode
Datasheet	LN52 Datasheet
Additional preview pages of the LN52 datasheet.

High-power output, high-efficiency : PO = 6 mW (typ. ) Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm Optimum for mesuring instruments and control equipments in conbination with silicon photodetectors ø5.35 +0.2.
0.1 ø4.2 +0.1.
0.2 3.0±0.3 12.7 min. 2.0±0.1 0.2±0.05 2-ø0.45±0.05 0 1. 5 .1 +0 0.1.
1. 0± 0. 1 45± 3˚ 2 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power diss.

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Published: Mar 22, 2005 |