C5884 transistor equivalent, silicon npn transistor.
9.9±0.3
4.6±0.2 2.9±0.2
15.0±0.3 8.0±0.2 1.0±0.1
* High breakdown voltage: VCBO ≥ 1 500 V
* Wide safe operation area
φ3.2±0.1
* Built-in dumper diode
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or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household.
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