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Rohm Semiconductor Electronic Components Datasheet

C5881 Datasheet

2SC5881

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Transistors
Power transistor (60V, 5A)
2SC5881
2SC5881
zFeatures
1) High speed switching.
(Tf : Typ. : 25ns at IC = 5A)
2) Low saturation voltage, typically
(Typ. : 200mV at IC = 3.0A, IB = 300mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2096
zApplications
Low frequency amplifier
High speed switching
zExternal dimensions (Unit : mm)
CPT3
(SC-63)
<SOT-428>
5.5 1.5
0.9
C0.5
(1) Base
(2) Collector
(3) Emitter
0.8Min. 2.5 1.5
9.5
(x1 / 2)
Each lead has same dimensions
Symbol : C5881
zStructure
NPN Silicon epitaxial planar transistor
zPackaging specifications
Type
Package
Code
2SC5881
Basic ordering unit (pieces)
Taping
TL
2500
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
Power dissipation
PC
Junction temperature
Range of storage temperature
1 Pw=10ms, non repetitive pulse
2 Ta=25°C
3 Tc=25°C
Tj
Tstg
Limits
100
100
60
6.5
5.0
10.0
1.0
10.0
150
55 to 150
Unit
V
V
V
V
A
A 1
W 2
W 3
°C
°C
Rev.B
1/3
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Rohm Semiconductor Electronic Components Datasheet

C5881 Datasheet

2SC5881

No Preview Available !

Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
BVCEO
BVCES
BVCBO
BVEBO
ICBO
IEBO
Collector-emitter saturation voltage VCE (sat)
DC current gain
hFE
Transition frequency
fT
Corrector output capacitance
Cob
Turn-on time
Ton
Storage time
Fall time
Tstg
Tf
1 Non repetitive pulse
2 See Switching charactaristics measurement circuits
Min.
60
100
100
6.5
120
Typ.
200
160
30
70
150
25
Max.
1.0
1.0
400
390
Unit
V
V
V
V
µA
µA
mV
MHz
pF
ns
ns
ns
Condition
IC=1mA
IC=100µA
IC=100µA
IE=100µA
VCB=40V
VEB=4V
IC=3.0A
IB=300mA
VCE=2V
IC=100mA
VCE=10V
IE= −100mA
f=10MHz
VCB=10V
IE=0mA
f=1MHz
IC=5A
IB1=500mA
IB2= −500mA
VCC 25V
1
1
2
2SC5881
zhFE RANK
Q
120270
R
180390
zElectrical characteristic curves
100
10
100ms
10ms
1ms
1 500µs
DC
0.1
Single
non repetitive
0.01 Pulsed
0.01
0.1
1
10 100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Safe Operating Area
1000
Ta=25°C
100
10
VCE=5V
VCE=3V
VCE=2V
1
0.001 0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.4 DC Current Gain vs.
Collector Current (ΙΙ)
1000
Tstg
Ton
100 Tf
Ta=25°C
VCC=25V
IC / IB=10 / 1
10
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.2 Switching Time
10
IC / IB=10 / 1
1
Ta=125°C
0.1 Ta=25°C
Ta= −40°C
0.01
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-Emitter Saturation
Voltage vs. Collector Current (Ι)
1000
100 Ta=125°C
Ta=25°C
Ta= −40°C
10
VCE=2V
1
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.3 DC Current Gain vs.
Collector Current (Ι)
10
Ta=25°C
1
IC / IB=20 / 1
IC / IB=10 / 1
0.1
0.01
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-Emitter Saturation
Voltage vs. Collector Current (ΙΙ)
Rev.B
2/3


Part Number C5881
Description 2SC5881
Maker Rohm
PDF Download

C5881 Datasheet PDF






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