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Panasonic Electronic Components Datasheet

C4212 Datasheet

2SC4212

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Power Transistors
2SC4212
Silicon NPN triple diffusion planar type
For color TV horizontal deflection driver
I Features
High collector to emitter voltage VCEO
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
www.DataSheet4U.com
8.0+–00..15
φ 3.16±0.1
Unit: mm
3.2±0.2
I Absolute Maximum Ratings TC = 25°C
www.DataSheet4U.comParameter
Symbol Rating
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
VCBO
VCEO
VEBO
ICP
IC
PC
350
300
7.5
400
200
1.2 *1
5 *2
Junction temperature
Storage temperature
Tj 150
Tstg 55 to +150
Note) *1: Without heat sink
*2: With a 100 × 100 × 2 mm A1 heat sink
Unit
V
V
V
mA
mA
W
°C
°C
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
123
0.5±0.1
1.76±0.1
1 : Emitter
2 : Collector
3 : Base
TO-126B Package
I Electrical Characteristics TC = 25°C
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
VCBO
VCEO
VEBO
hFE
VCE(sat)
fT
Cob
VCB = 200 V, IE = 0
VEB = 5 V, IC = 0
IC = 100 µA, IE = 0
IC = 5 mA, IB = 0
IE = 100 µA, IC = 0
VCE = 10 V, IC = 10 mA
IC = 50 mA, IB = 5 mA
VCB = 30 V, IE = 10 mA, f = 200 MHz
VCB = 50 V, IE = 0, f = 1 MHz
Min
350
300
7.5
40
50
Typ Max
2
2
250
1
4.5
Unit
µA
µA
V
V
V
V
MHz
pF
1


Panasonic Electronic Components Datasheet

C4212 Datasheet

2SC4212

No Preview Available !

2SC4212
Power Transistors
PC Ta
6
(1)With a 100×100×2mm
Al heat sink
(2)Without heat sink
5
4
3 (1)
2
1
(2)
0
0 20 40 60 80 100 120 140 160 180 200
www.DataSheet4U.coAmbient temperature Ta (˚C)
IC VCE
200
TC=25˚C
160
IB=2.0mA 1.8mA
1.6mA
120
1.4mA
1.2mA
1.0mA
0.8mA
0.6mA
80
0.4mA
40 0.2mA
0
0 4 8 12 16 20
Collector to emitter voltage VCE (V)
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240
25˚C
VCE=10V
TC=75˚C
25˚C
200
160
120
80
40
0
0 0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
VCE(sat) IC
10
IC/IB=10
3
1
25˚C
0.3 TC=100˚C
25˚C
0.1
0.03
0.01
1 3 10 30 100
Collector current IC (mA)
1000
300
100
hFE IC
VCE=10V
TC=100˚C
25˚C
25˚C
30
10
3
1
1 3 10 30 100
Collector current IC (mA)
fT IE
200
VCB=30V
f=200MHz
TC=25˚C
160
120
80
40
0
1 3 10 30 100 300 1000
Emitter current IE (A)
Cob VCB
20
IE=0
f=1MHz
TC=25˚C
16
12
8
4
0
1 3 10 30 100
Collector to base voltage VCB (V)
Area of safe operation (ASO)
10 Single pulse
TC=25˚C
3
1
ICP
0.3
IC
0.1
0.03
t=10ms
t=1s
DC
0.01
0.003
0.001
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2


Part Number C4212
Description 2SC4212
Maker Panasonic Semiconductor
PDF Download

C4212 Datasheet PDF






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