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Panasonic Electronic Components Datasheet

C3795 Datasheet

2SC3795

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Power Transistors
2SC3795, 2SC3795A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q High-speed switching
q High collector to base voltage VCBO
q Low collector to emitter saturation voltage VCE(sat)
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SC3795
www.DataShebeat4seUv.cooltmage 2SC3795A
VCBO
800
900
V
Collector to 2SC3795
emitter voltage 2SC3795A
VCES
800
900
V
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCEO
VEBO
ICP
IC
IB
PC
500
8
10
5
3
40
2
V
V
A
A
A
W
Junction temperature
Tj
150
Storage temperature
Tstg –55 to +150
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
˚C
˚C
Conditions
Collector cutoff
current
2SC3795
2SC3795A ICBO
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
2SC3795
2SC3795A
IEBO
VCEO(sus)*
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
ton
Storage time
Fall time
2SC3795
2SC3795A
tstg
tf
VCB = 800V, IE = 0
VCB = 900V, IE = 0
VEB = 5V, IC = 0
IC = 0.2A, L = 25mH
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 3A
IC = 3A, IB = 0.6A
IC = 3A, IB = 0.6A
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 3A, IB1 = 0.6A, IB2 = – 0.6A,
VCC = 200V
*VCEO(sus) Test circuit
50/60Hz
mercury relay
X
L 25mH
120
6V
Y
1
15V
G
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min typ max Unit
100
µA
100
100 µA
500 V
15
8
1V
1.5 V
8 MHz
1
µs
1.2
3 µs
1
µs
1.2
1


Panasonic Electronic Components Datasheet

C3795 Datasheet

2SC3795

No Preview Available !

Power Transistors
80
70
60
50
(1)
40
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=2.0W)
30
20
(2)
10
(3)
0
0 20 40 60 80 100 120 140 160
www.DataSheet4U.cAommbient temperature Ta (˚C)
VBE(sat) — IC
100
IC/IB=5
30
10
3
1
25˚C
TC=–25˚C
100˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
10000
3000
1000
Cob — VCB
IE=0
f=1MHz
TC=25˚C
300
100
30
10
3
1
0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V)
IC — VCE
8
TC=25˚C
7
6 IB=1200mA
1000mA
5 800mA
600mA
4
400mA
300mA
3
200mA
150mA
2
100mA
50mA
1 20mA
0
0 2 4 6 8 10
Collector to emitter voltage VCE (V)
2SC3795, 2SC3795A
VCE(sat) — IC
100
IC/IB=5
30
10
3 25˚C
TC=100˚C
1
0.3
–25˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
1000
300
100
30
10
hFE — IC
VCE=5V
TC=100˚C
–25˚C
25˚C
3
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
1000
300
100
fT — IC
VCE=10V
f=1MHz
TC=25˚C
30
10
3
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
ton, tstg, tf — IC
100
Pulsed tw=1ms
Duty cycle=1%
30 IC/IB=5
(IB1=–IB2)
10 VCC=200V
TC=25˚C
3 tstg
1 ton
tf
0.3
0.1
0.03
0.01
0
1234567
Collector current IC (A)
8
Area of safe operation (ASO)
10
ICP
3 IC
1
0.3
0.1
10ms
DC
t=0.5ms
1ms
0.03
0.01
Non repetitive pulse
0.003 TC=25˚C
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2


Part Number C3795
Description 2SC3795
Maker Panasonic Semiconductor
PDF Download

C3795 Datasheet PDF






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