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2SC5223 - NPN TRANSISTOR

Features

  • Unit µA µA V V V 1.0 1.5 V V 1 Power Transistors PC.
  • Ta 12 Without heat sink 600 Ta=25˚C 500 2SC5223 IC.
  • VCE Collector to emitter saturation voltage VCE(sat) (V) 10 IC/IB=10 3 1 TC=100˚C 0.3 25˚C 0.1.
  • 25˚C 0.03 0.01 0.003 0.001 0.001 0.003 VCE(sat).
  • IC Collector power dissipation PC (W) 10 Collector current IC (A) IB=6mA 400 5mA 4mA 3mA 2mA 1mA 8 6 300 4 200 2 100 0 0 40 80 120 160 200 0 0 1 2 3 4 5 6 0.01 0.03 0.1 0.3 1 Ambient tempera.

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Power Transistors 2SC5223 Silicon NPN triple diffusion planar type Unit: mm For high-speed switching 7.3± 0.1 1.8± 0.1 6.5± 0.1 5.3± 0.1 4.35± 0.1 2.3± 0.1 0.5± 0.1 2.5± 0.1 0.8max 0.93±0.1 1.0± 0.1 0.1± 0.05 0.5± 0.1 q q High collector to base voltage VCBO High collector to emitter VCEO 0.75± 0.1 2.3± 0.1 4.6± 0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC=25°C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings 500 500 7 2.0 1.0 10 150 –55 to +150 Unit V V V A A 2.3 1 2 3 1:Base 2:Collector 3:Emitter U Type Package Unit: mm 6.5±0.2 5.35 4.35 1.8 0.75 2.3 W ˚C ˚C 1 2 3 0.6 0.
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