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2SC3981 - Silicon NPN Transistor

Features

  • q q q q 0.7 q 16.2±0.5 12.5 3.5 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 900 1000 900 1000 800 7 10 5 3 80 3 150.
  • 55 to +150 Unit V 15.0±0.3 11.0±0.2 5.0±0.2 3.2 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 s Absolute Maximum Ratings Parameter Collector to base vo.

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Power Transistors 2SC3981, 2SC3981A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm s Features q q q q 0.7 q 16.2±0.5 12.5 3.5 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 900 1000 900 1000 800 7 10 5 3 80 3 150 –55 to +150 Unit V 15.0±0.3 11.0±0.2 5.0±0.2 3.2 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SC3981 2SC3981A 2SC3981 VCES VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg Symbol VCBO 1.1±0.1 5.45±0.3 10.9±0.
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