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2SB621A Datasheet Silicon PNP Transistor

Manufacturer: Panasonic

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Overview

Transistor 2SB621, 2SB621A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD592 and 2SD592A 5.0±0.2 Unit: mm 4.0±0.2 q q Low collector to emitter saturation voltage VCE(sat).

High transition frequency fT.

(Ta=25˚C) Ratings –30 –60 –25 –50 –5 –1.5 –1 750 150 –55 ~ +150 Unit V s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB621 2SB621A 2SB621 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol 13.5±0.5 5.1±0.

Key Features

  • 0.45.
  • 0.1 +0.2 0.45.
  • 0.1 1.27 +0.2 emitter voltage 2SB621A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V A A mW ˚C ˚C 1.27 1 2 3 2.3±0.2 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO.
  • 92 EIAJ:SC.
  • 43A s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SB621 2SB621A 2SB621 2SB621A (Ta=25˚C) Symb.

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