2SB1299
Overview
- 5±0.2
- 7±0.3 φ3.1±0.1
- 0±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg
- 4±0.1
- 3±0.2 Solder Dip
- 8±0.1
- 5 +0.2 -0.1
- 54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency
- h (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE* VCE(sat) fT Conditions VCB = -60V, IE = 0 VCE = -40V, IB = 0 VEB = -6V, IC = 0 IC = -25mA, IB = 0 VCE = -4V, IC = - 0.5A IC = -2A, IB = - 0.05A VCE = -12V, IC = - 0.2A, f = 10MHz 30 -60 300 700 -1 V MHz min typ max -100 -100 -100 Unit µA µA µA V FE Rank classification Q 300 to 500 P 400 to 700 hFE Rank 1 Power Transistors PC - Ta
