2SB1297 - Silicon PNP Transistor

Panasonic

Key Features

0.45.
0.1 +0.15 2.3±0.2 1:Emitter 2:Collector 3:Base TO.
92NL Package s Electrical Characteristics Parameter Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol VCEO VEBO hFE1.
1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions IC =.
0.1mA, IB = 0 IE =.
10µA, IC = 0 VCE =.
10V, IC =.

2SB1297 silicon pnp transistor by Panasonic - Datasheet Preview

Datasheet Details

Part number	2SB1297
Manufacturer	Panasonic
File Size	37.86 KB
Description	Silicon PNP Transistor
Datasheet	2SB1297 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SB1290	Silicon PNP transistor	BLUE ROCKET ELECTRONICS
2SB1290	Silicon PNP Power Transistor	Inchange Semiconductor
2SB1290	PNP Transistor	ROHM
2SB1291	SILICON POWER TRANSISTOR	SavantIC
2SB1291	PNP Transistor	INCHANGE

Other Datasheets by Panasonic

Part Number	Description
2SB1299	Silicon PNP Transistor
2SB1207	Silicon PNP epitaxial planer type Transistor
2SB1209	Silicon PNP triple diffusion planer type Transistor
2SB1218A	Silicon PNP Transistor
2SB1219	Silicon PNP epitaxial planer type Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Transistor 2SB1297 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD1937 Unit: mm 5.0±0.2 4.0±0.2 q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –120 –120 –5 –1 – 0.5 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 1 2 3 2.54±0.15 1.27 0.45 –0.1 1.27 +0.15 13.5±0.5 Extremely satisfactory linearity of the forward current transfer ratio hFE. High transition frequency fT. Makes up a complementary pair with 2SD1937, which is optimum for the pre-driver stage of a 40 to 60W output amplifier. 0.7±0.1 0.7±0.2 8.