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MIP3E3SMY
MOS
(IPD)
■ •
(MIP2ExD • •
■ •
■
50% )
VD 700 VC 8 ID 1.1 IDP 1.7 IC 0.1 Tch 150 Tstg −55 ∼ +150
V V A A A °C °C
■
Control
Max. duty clock
SQ RQ
SQ RQ
13.5±0.5 4.2±0.3 Solder Dip
15.4±0.3
2.8±0.2 1.5±0.2
10.5±0.5 9.5±0.2 8.0±0.2
Unit : mm 4.5±0.2
1.4±0.1
6.7±0.3 2.8±0.2
φ 3.7±0.2
1.4±0.1 0.8±0.1
2.54±0.3 5.08±0.5
(9.3)
2.5±0.2 0.6+–00..21
123
1 : Control 2 : Source 3 : Drain TO-220-A1 Package
: MIP3E3SMY
Drain
MOSFET
: 2003 8
SLB00054AJD
Source 1
MIP3E3SMY
■ TC = 25°C ± 3°C
PWM /
) *:
fOSC VC = VC(CNT) − 0.2 V, VD = 5 V
MAXDC VC = VC(CNT) − 0.2 V, VD = 5 V
*
GPWM
VC = VC(CNT)
IC(SB)1 IC(SB)2 IC(OP) VC(ON) VC(OFF) ∆VC VC(CLP) TSW / TTIM fTIM IC(CHG)
VC(CNT) * ∆VC(CNT)
VD(MIN)
VC < VC(ON) , VD = 5 V VC > VC(CNT) , VD = 5 V VC = VC(CNT) − 0.
MIP3E3SMY Datasheet
