q 100V high breakdown voltage MOS FET and CMOS control circuits are integrated into one chip q 5V and 3 - 5W output with 24VDC input (Flyback method)
unit: mm
0.6±0.3 0.4±0.25 1 2 3 4
8 5.0±0.3 1.5±0.2 4.2±0.3 6.5±0.3 7 6 5
s.
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Intelligent Power Devices (IPDs)
MIP301
Silicon MOS IC
s Features
q 100V high breakdown voltage MOS FET and CMOS control circuits are integrated into one chip q 5V and 3 - 5W output with 24VDC input (Flyback method)
unit: mm
0.6±0.3 0.4±0.25 1 2 3 4
8 5.0±0.3 1.5±0.2 4.2±0.3 6.5±0.3 7 6 5
s Applications
1.27 0.1±0.1 0.3
q IPD for DC/DC converter
s Absolute Maximum Ratings (Ta = 25 ± 3°C)
Parameter Drain voltage Control voltage Input voltage Output current Control current Channel temperature Storage temperature Symbol VD VC VIN ID IC Tch Tstg Ratings 90 8 30 1.1 0.
MIP301 Datasheet
