K2276 mos equivalent, silicon n-channel mos.
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q Low 5.3±0.1 4.35±0.1 3.0±0.1 ON-resistance RDS(on) switching q High-speed 0.2max. 5.5±0.1 7.3±0.1 0.8max. 9.8±0.1 1.0±0.2 1.0±0.1 0.85±0.1 0.75±0.1 0.5±0.1 .
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