* Low On-state Resistance RDS(on) = 2.8 Ω MAX. (VGS = 10 V, ID = 2.0 A)
* LOW Ciss Ciss = 1 000 pF TYP.
* High Avalanche Capability Ratings ABSOLUTE MAXIMUM .

PACKAGE DIMENSIONS (in millimeters) FEATURES
* Low On-state Resistance RDS(on) = 2.8 Ω MAX. (VGS = 10 V, ID = 2.0.

The 2SK2275 is N-channel Power MOS Field Effect Transis- tor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) FEATURES
* Low On-state Resistance RDS(on) = 2.8 Ω MAX. (VGS = 10 V, ID = 2.0 A)
* LOW Ciss C.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts