FC8V3303 - Silicon N-channel MOS FET

Panasonic

Key Features

s.
N-channel dual type.
Low drain-source ON resistance: RDS(on) typ. = 15 mW (VGS = 10 V).
Small size surface mounting package: WMini8-F1 (2.9 mm × 2.8 mm × 0.8 mm).
Contributes to miniaturization of sets, mount area reduction.
Eco-friendly Halogen-free package.
Packaging FC8V33030L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard).
Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Drain-source surre.

FC8V3303 silicon n-channel mos fet by Panasonic - Datasheet Preview

Datasheet Details

Part number	FC8V3303
Manufacturer	Panasonic
File Size	395.55 KB
Description	Silicon N-channel MOS FET
Datasheet	FC8V3303 Datasheet

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Full PDF Text Transcription (Reference)

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This product complies with the RoHS Directive (EU 2002/95/EC). FC8V3303 Silicon N-channel MOS FET For DC-DC converter circuits  Overview FC8V3303 is the N-channel dual type MOSFET which is the most suitable for DC-DC converter circuits.  Features  N-channel dual type  Low drain-source ON resistance: RDS(on) typ. = 15 mW (VGS = 10 V)  Small size surface mounting package: WMini8-F1 (2.9 mm × 2.8 mm × 0.8 mm)  Contributes to miniaturization of sets, mount area reduction  Eco-friendly Halogen-free package  Packaging FC8V33030L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage Gate-source surrender voltage Drain current *1 t = 10 s VDSS VGSS ID 33 ±20 6.