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Panasonic Electronic Components Datasheet

FC8V22080L Datasheet

Gate resistor installed Dual N-channel MOS FET

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DReovcisNioon. . T3 T4-EA-14491
FC8V22080L
Gate resistor installed Dual N-channel MOS FET
For lithium-ion secondary battery protection circuits
„ Features
y Low drain-source ON resistance:Rds(on) typ. = 13 mΩVGS = 4.5 V)
y Built-in gate resistor
y Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
„ Marking Symbol: 4D
„ Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
„ Absolute Maximum Ratings Ta = 25 °C
Parameter
Symbol
Rating
Unit
Drain-source Voltage
VDS
24
V
Gate-source Voltage
DC *1
Drain Current DC *2
Pulse *3
Total power
dissipation
Ta = 25 °C, DC *1
Ta = 25 °C, DC *2
Ta = 25 °C, t = 10 s *1
Channel Temperature
VGS
ID1
ID2
IDp
PD1
PD2
PD3
Tch
±12
7
10
70
1.0
2.0
1.2
150
V
A
A
A
W
°C
Storage Temperature Range
Tstg -55 to +150 °C
Thermal resistance (ch-a)
Rth(ch-a)
125
°C/W
Note *1 Mounted on FR4 board ( 25.4 mm × 25.4 mm × t0.8 mm )
Copper foil of the drain portion should have a area of 300mm2 or more.
*2 Mounted on Ceramic substrate (70 mm × 70 mm × t1.0 mm).
*3 t = 10 μs, Duty Cycle 1 %
Product Standards
MOS FET
FC8V22080L
2.9
0.3
8765
Unit: mm
0.16
1 2 3 4 (0.81)
0.65
1. Source(FET1) 5. Darin(FET1,2)
2. Gate(FET1) 6. Darin(FET1,2)
3. Source(FET2) 7. Darin(FET1,2)
4. Gate(FET2) 8. Darin(FET1,2)
Panasonic
WMini8-F1
JEITA
SC-115
Code
-
Internal Connection
8 7 65
FET 1
Rg
FET 2
Rg
1 2 34
1. Source(FET1) 5. Darin(FET1,2)
2. Gate(FET1) 6. Darin(FET1,2)
3. Source(FET2) 7. Darin(FET1,2)
4. Gate(FET2) 8. Darin(FET1,2)
Established : 2013-01-10
Revised : 2014-01-08
Page 1 of 5


Panasonic Electronic Components Datasheet

FC8V22080L Datasheet

Gate resistor installed Dual N-channel MOS FET

No Preview Available !

DReovcisNioon. . T3 T4-EA-14491
Product Standards
MOS FET
FC8V22080L
„ Electrical Characteristics Ta = 25 °C ± 3 °C
Parameter
Symbol
Conditions
Min Typ Max Unit
Drain-source Breakdown Voltage
VDSS ID = 1 mA, VGS = 0 V
24
V
Zero Gate Voltage Drain Current
IDSS VDS = 24 V, VGS = 0 V
1.0 μA
Gate-source Leakage Current
IGSS VGS = ±8 V, VSS = 0 V
±10 μA
Gate-source Threshold Voltage
Vth ID = 0.33 mA, VDS = 10 V
0.40 0.90 1.4
V
RDS(on)1 ID = 3.5 A, VGS = 4.5 V
9.8 13 16.2
Drain-source On-state Resistance
RDS(on)2 ID = 3.5 A, VGS = 3.8 V
RDS(on)3 ID = 3.5 A, VGS = 3.1 V
10 13.8 18.1
10.8 15.5 22.1
mΩ
RDS(on)4 ID = 3.5 A, VGS = 2.5 V
12 18.5 32.9
Body Diode Forward Voltage
VSD IF = 7.0 A, VGS = 0 V
0.8 1.2
V
Input Capacitance *1
Output Capacitance *1
Reverse Transfer Capacitance *1
Turn-on delay Time *1,*2
Rise Time *1,*2
Turn-off delay Time *1,*2
Fall Time *1,*2
Total Gate Charge *1
Gate-source Charge *1
Gate-drain Charge *1
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDD = 10 V, VGS = 0 to 4.0 V
ID = 3.5 A
VDD = 10 V, VGS = 4.0 to 0 V
ID = 3.5 A
VDD = 10 V
VGS = 0 to 4.0 V,
ID = 7.0 A
860
85
70
0.3
0.6
2.2
1.1
7.8
2.8
1.8
pF
μs
μs
nC
Note Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
*1 Assured by design
*2 Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time
VDD = 10 V
IS = 3.5 A
Rg
G2
RL = 2.85 Ω
Vout
S2
Vin G1 Rg
4 V 50 Ω
0V
PW = 10 μs
D.C. 1 %
S1
Vin
Vout
90 %
10 %
90 %
90 %
10 % 10 %
td(on) tr
td(off) tf
Page 2 of 5
Established : 2013-01-10
Revised : 2014-01-08


Part Number FC8V22080L
Description Gate resistor installed Dual N-channel MOS FET
Maker Panasonic
Total Page 6 Pages
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