900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Panasonic Electronic Components Datasheet

C1359 Datasheet

Silicon NPN Transistor

No Preview Available !

Transistor
2SC1359
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA838
s Features
q Optimum for RF amplification of FM/AM radios.
q High transition frequency fT.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
30
20
5
30
400
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
5.0±0.2
Unit: mm
4.0±0.2
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Forward current transfer ratio
ICBO
hFE*
VCB = 10V, IE = 0
VCB = 10V, IE = –1mA
0.1 µA
70 220
Transition frequency
fT
VCB = 10V, IE = –1mA, f = 200MHz 150
250
MHz
Noise figure
Reverse transfer impedance
NF
Zrb
VCB = 10V, IE = –1mA, f = 5MHz
VCB = 10V, IE = –1mA, f = 2MHz
2.8 4 dB
22 50
Common emitter reverse transfer capacitance Cre
VCE = 10V, IC = 1mA, f = 10.7MHz
0.9 1.5 pF
*hFE Rank classification
Rank
B
hFE 70 ~ 140
C
110 ~ 220
1


Panasonic Electronic Components Datasheet

C1359 Datasheet

Silicon NPN Transistor

No Preview Available !

Transistor
PC — Ta
500
450
400
350
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IB — VBE
120
VCE=10V
Ta=25˚C
100
80
60
40
20
0
0 0.2 0.4 0.6 0.8 1.0
Base to emitter voltage VBE (V)
hFE — IC
240
VCE=10V
200
160 Ta=75˚C
25˚C
120
–25˚C
80
40
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
IC — VCE
12
Ta=25˚C
10 IB=100µA
8 80µA
6 60µA
4 40µA
2 20µA
0
0 6 12 18
Collector to emitter voltage VCE (V)
IC — VBE
60
VCE=10V
50
25˚C
40
Ta=75˚C –25˚C
30
20
10
0
0 0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
fT — IE
400
Ta=25˚C
350 VCB=10V
6V
300
250
200
150
100
50
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Emitter current IE (mA)
2SC1359
IC — IB
15.0
12.5
VCE=10V
Ta=25˚C
10.0
7.5
5.0
2.5
0
0 20 40 60 80 100
Base current IB (µA)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
–25˚C
0.03
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
Zrb — IE
60
VCB=10V
f=2MHz
Ta=25˚C
50
40
30
20
10
0
– 0.1 – 0.3 –1 –3
–10
Emitter current IE (mA)
2


Part Number C1359
Description Silicon NPN Transistor
Maker Panasonic
PDF Download

C1359 Datasheet PDF






Similar Datasheet

1 C1350-AL ADSL Transformers
Coilcraft
2 C1359 Silicon NPN Transistor
Panasonic
3 C135D375P Microwave Disc Resistors
Component General
4 C135T375P Microwave T-Pad Attenuators
Component General





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy