C1306 - Silicon NPN Transistor

Datasheet Details

Part number	C1306
Manufacturer	Unknown Manufacturer
File Size	9.34 KB
Description	Silicon NPN Transistor
Datasheet	C1306 Datasheet

General Description

: The 2SC1306 is a silicon NPN transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment.

WINTransceiver BCE Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector-Emitter Voltage (RBE = 150 Ohm), VCER 75V Collector-Base Voltage, VCBO 80V Emitter-Base Voltage, VEBO 5V Collector Current, IC Continuous 3A Peak 5A Collector Power Dissipation (TA = +25°C), PD Collector Power Dissipation (TC = +50°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 1.2W 10W +150°C -55° to +150°C Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain-Bandwidth Product Output Capacitance Power Output Collector Efficiency V(BR)CBO IC = 100µA, IB = 0 V(BR)CER IC = 1mA, RBE = 150 Ohm V(BR)EBO IE = 100µA, IC = 0 ICBO VCB = 40V IE = 0 IEBO VEB = 4V, IC = 0 hFE VCE = 5V, IC = 0.5A VCE(sat) IC = 1A, IB = 0.1A VBE(sat) IC = 1A, IB = 0.1A fT VCE = 10V, IC = 0.1A Cob VCB = 10V, f = 1MHz PO VCC = 12V, Pin = 0.2W, f = 27MHz 80 - - V 75 - - V 5- - V - - 10 µA - - 10 µA 25 - 200 - 0.15 0.60 V - 0.9 1.2 V 100 150 - MHz 25 - 4.0 - - W 60 - - %

Overview

2SC1306 Silicon NPN Transistor Final RF Power Output.

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