Datasheet4U.com

2PG006 - Silicon N-channel enhancement IGBT

Product Overview

Panasonic

📥 Download Datasheet

2PG006 Silicon N-channel enhancement IGBT by Panasonic - Datasheet Preview — Datasheet preview – 2PG006

Datasheet Details

Part number	2PG006
Manufacturer	Panasonic
File Size	344.27 KB
Description	Silicon N-channel enhancement IGBT
Datasheet	2PG006 Datasheet
Additional preview pages of the 2PG006 datasheet.

Product details

Features

s.
Low collector-emitter saturation voltage: VCE(sat) < 2.4 V.
High-speed switching: tf = 175 ns (typ. ).
Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-emitter voltage (E-B short) VCES 430 V Gate-emitter voltage (E-B short) VGES.
30 to +35 V Collector current IC 40 A Peak collector current.
ICP 230 A Power dissipation 40 W Ta = 25°C PC 2.0 W Junction temperature Tj 150 °C Storage temperature Tstg.
55.

📁 Similar Datasheet

2PG401 - Insulated Gate Bipolar Transistor (Panasonic Semiconductor)
2PG402 - Insulated Gate Bipolar Transistor (Panasonic Semiconductor)

Other Datasheets by Panasonic

2PG001 - N-channel enhancement mode IGBT
2PG002 - N-Channel IGBT
2PG009 - Silicon N-Channel IGBT
2PG011 - Silicon N-Channel Enhancement IGBT

Published: Mar 27, 2016 |