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F1047B Datasheet Infrared Emitting Diode Chip

Manufacturer: ams OSRAM

Download the F1047B datasheet PDF. This datasheet also includes the F1047A variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (F1047A_OsramOptoSemiconductors.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number F1047B
Manufacturer ams OSRAM
File Size 99.61 KB
Description Infrared Emitting Diode Chip
Datasheet download datasheet F1047B Datasheet

General Description

Infrarot emittierender Chip, Oberseite Kathodenanschluss Infrared emitting die, top side cathode connection Infrarot emittierender Chip, Oberseite Kathodenanschluss, Oberfläche aufgerauht.

Infrared emitting die, top side cathode connection, surface frosted 2003-04-11 1 www.DataSheet4U.com F 1047A, F 1047B Elektrische Werte (TA = 25 °C) Electrical values1) (TA = 25 °C) Bezeichnung Parameter Emissionswellenlänge Peak wavelength IF = 10 mA Spektrale Bandbreite bei 50% von Imax, Spectral bandwidth at 50% of Imax IF = 10 mA Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 100 mA, RL = 50 Ω Switching ti

Overview

www.DataSheet4U.com GaAlAs-Infrarot-Lumineszenzdiode (880 nm) GaAlAs Infrared Emitting Diode (880 nm) F 1047A F 1047B Vorläufige Daten / Preliminary Data Wesentliche Merkmale • Typ.

Key Features

  • Typ. total radiant power: 22 mW @ 100 mA in TOPLED® package.
  • Chipsize: 300 x 300 µm².
  • Very highly efficient GaAlAs LED.
  • High reliability.
  • High pulse handling capability.
  • Good spectral match to silicon photodetectors.
  • Frontside metallization: aluminum Backside metallization: gold alloy.
  • Delivery: diced on foil.

More Datasheets from ams OSRAM

Part Number Description
F1047A Infrared Emitting Diode Chip