F1047A - Infrared Emitting Diode Chip

Product Overview

Osram Opto Semiconductors

Datasheet Details

Part number	F1047A
Manufacturer	Osram Opto Semiconductors
File Size	99.61 KB
Description	Infrared Emitting Diode Chip
Datasheet	F1047A Datasheet
Additional preview pages of the F1047A datasheet.

Product details

Description

Infrarot emittierender Chip, Oberseite Kathodenanschluss Infrared emitting die, top side cathode connection Infrarot emittierender Chip, Oberseite Kathodenanschluss, Oberfläche aufgerauht.

Features

Typ. total radiant power: 22 mW @ 100 mA in TOPLED® package.
Chipsize: 300 x 300 µm².
Very highly efficient GaAlAs LED.
High reliability.
High pulse handling capability.
Good spectral match to silicon photodetectors.
Frontside metallization: aluminum Backside metallization: gold alloy.
Delivery: diced on foil.

📁 Similar Datasheet

F1040 - RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
F1000LC120 - Extra Fast Recovery Diode (IXYS)
F1001 - RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
F100122 - 9-BIT BUFFER (National Semiconductor)
F100124 - Hex TTL-to-ECL Translator (National Semiconductor)
F100125 - Hex ECL-to-TTL Translator (National Semiconductor)
F100136 - 4-Stage Counter / Shift Register (National Semiconductor)
F100164 - 16 Input Multiplexer (Fairchild Semiconductor)

Other Datasheets by Osram Opto Semiconductors

F1047B - Infrared Emitting Diode Chip

Published: Jan 18, 2008 |