OSG65R900DF mosfet equivalent, enhancement mode n-channel power mosfet.
* VDS, min@Tjmax
* ID, pulse
* RDS(ON), max @ VGS=10 V
* Qg
700 V 15 A 900 mΩ 7.6 nC
* Schematic.
OSG65R900xF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for active power factor correction and switching mode power supply applications.
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