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OSG65R900 - Enhancement Mode N-Channel Power MOSFET

Download the OSG65R900 datasheet PDF. This datasheet also covers the OSG65R900A variant, as both devices belong to the same enhancement mode n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

OSG65R900x series use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics.

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Note: The manufacturer provides a single datasheet file (OSG65R900A-OrientalSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number OSG65R900
Manufacturer Oriental Semiconductor
File Size 825.89 KB
Description Enhancement Mode N-Channel Power MOSFET
Datasheet download datasheet OSG65R900 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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 General Description OSG65R900A,OSG65R900D,OSG65R900F Enhancement Mode N-Channel Power MOSFET OSG65R900x series use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for active power factor correction and switching mode power supply applications.  VDS@Tjmax  ID  RDS(ON),max@VGS=10V 700V 5A 0.
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