PCFFS10120AF diode equivalent, sic schottky diode.
* Max Junction Temperature 175°C
* Avalanche Rated 105 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
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* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits
Die Information
* Wafer Diamete.
Silicon Carbide (SiC) Schottky Diode has no switching loss,
provides improved system efficiency against Si diodes by utilizing new semiconductor material − Silicon Carbide, enables higher operating frequency, and helps increasing power density and re.
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