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NXH80T120L2Q0S2TG Datasheet

Q0PACK Module

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NXH80T120L2Q0S2G/S2TG,
NXH80T120L2Q0P2G
Q0PACK Module
The NXH80T120L2Q0S2/P2G is a power module containing a
Ttype neutral point clamped (NPC) three level inverter stage. The
integrated field stop trench IGBTs and fast recovery diodes provide
lower conduction losses and switching losses, enabling designers to
achieve high efficiency and superior reliability.
Features
Low Switching Loss
Low VCESAT
Compact 65.9 mm x 32.5 mm x 12 mm Package
Thermistor
Options with preapplied thermal interface material (TIM) and
without preapplied TIM
Options with solderable pins and pressfit pins
Typical Applications
Solar Inverter
Uninterruptable Power Supplies
15,16
5,14
Half Bridge
IGBTs & Diodes
1200V/80A
T1
17
18
D2 D3
D1
8,9,10,11
T2 T3
7 6 13 12
Neutral Point
IGBTs & Diodes
650V/50A
2 T4
1
3,4
Figure 1. Schematic Diagram
D4
19 20
NTC
www.onsemi.com
Q0PACK
CASE 180AA
PRESSFIT PINS
Q0PACK
CASE 180AB
SOLDERABLE PINS
MARKING DIAGRAMS
NXH80T120L2Q0P2G
ATYYWW
NXH80T120L2Q0S2G
ATYYWW
NXH80T120L2Q0S2G = Specific Device Code
G = Pbfree Package
A = Assembly Site Code
T = Test Site Code
YYWW = Year and Work Week Code
PIN ASSIGNMENTS
12 13
11
10
9
8
76
14
5
15 16
43
17 18
19
20
21
© Semiconductor Components Industries, LLC, 2017
September, 2018 Rev. 5
ORDERING INFORMATION
See detailed ordering and shipping information in the
dimensions section on page 13 of this data sheet.
1 Publication Order Number:
NXH80T120L2Q0S2G/D


  ON Semiconductor Electronic Components Datasheet  

NXH80T120L2Q0S2TG Datasheet

Q0PACK Module

No Preview Available !

NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G
Table 1. MAXIMUM RATINGS
Rating
Symbol
Value
Unit
HALF BRIDGE IGBT
CollectorEmitter Voltage
GateEmitter Voltage
Continuous Collector Current @ Th = 80°C (TJ = 175°C)
Pulsed Collector Current (TJ = 175°C)
Maximum Power Dissipation @ Th = 80°C (TJ = 175°C)
Short Circuit Withstand Time @ VGE = 15 V, VCE = 600 V, TJ v 150°C
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
NEUTRAL POINT IGBT
VCES
VGE
IC
ICpulse
Ptot
Tsc
TJMIN
TJMAX
1200
±20
67
201
158
5
40
150
V
V
A
A
W
ms
°C
°C
CollectorEmitter Voltage
GateEmitter Voltage
Continuous Collector Current @ Th = 80°C (TJ = 175°C)
Pulsed Collector Current (TJ = 175°C)
Maximum Power Dissipation @ Th = 80°C (TJ = 175°C)
Short Circuit Withstand Time @ VGE = 15 V, VCE = 400 V, TJ v 150°C
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
HALF BRIDGE DIODE
VCES
VGE
IC
ICpulse
Ptot
Tsc
TJMIN
TJMAX
650
±20
49
147
86
5
40
150
V
V
A
A
W
ms
°C
°C
Peak Repetitive Reverse Voltage
Continuous Forward Current @ Th = 80°C (TJ = 175°C)
Repetitive Peak Forward Current (TJ = 175°C, tp limited by TJmax)
Maximum Power Dissipation @ Th = 80°C (TJ = 175°C)
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
NEUTRAL POINT DIODE
VRRM
IF
IFRM
Ptot
TJMIN
TJMAX
1200
28
84
73
40
150
V
A
A
W
°C
°C
Peak Repetitive Reverse Voltage
Continuous Forward Current @ Th = 80°C (TJ = 175°C)
Repetitive Peak Forward Current (TJ = 175°C, tp limited by TJmax)
Maximum Power Dissipation @ Th = 80°C (TJ = 175°C)
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
THERMAL PROPERTIES
VRRM
IF
IFRM
Ptot
TJMIN
TJMAX
650
33
99
63
40
150
V
A
A
W
°C
°C
Storage Temperature range
INSULATION PROPERTIES
Tstg
40 to 125
°C
Isolation test voltage, t = 1 sec, 60 Hz
Creepage distance
Vis
3000
VRMS
12.7 mm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
Table 2. RECOMMENDED OPERATING RANGES
Rating
Symbol
Min
Max Unit
Module Operating Junction Temperature
TJ 40
150 °C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
www.onsemi.com
2


Part Number NXH80T120L2Q0S2TG
Description Q0PACK Module
Maker ON Semiconductor
Total Page 16 Pages
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