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Half-Bridge IGBT Module, Qdual3
1200 V, 800 A
NXH800H120L7QDSG
General Description The NXH800H120L7QDSG is a 1200 V 800 A rated half bridge
IGBT power module. The integrated Field Stop Trench 7 IGBTs and Gen. 7 diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.
Features
• 1200 V, 800 A 2 in 1 Half Bridge Configuration IGBT Power
Module
• Field Stop Trench 7 IGBTs & Gen.7 Diodes • NTC Thermistor • Isolated Base Plate • Solderable Pins • Low Inductive Layout • This is a Pb−Free Device
Typical Applications
• Motor Drives • Servo Drives • Solar Drives • Uninterruptible Power Supply Systems (UPS)
4
9
T1 7
5 8
D1 10/11
6
T2
D2
1
2 3
Figure 1. Schematic
DATA SHEET www.onsemi.com
PIM11, 152.00 x 62.15 x 20.
NXH800H120L7QDSG Datasheet
