NVD14N03R mosfet equivalent, power mosfet.
* Planar HD3e Process for Fast Switching Performance
* Low RDS(on) to Minimize Conduction Loss
* Low Ciss to Minimize Driver Loss
* Low Gate Charge
* .
Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
* These Devices are Pb−Fr.
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