NVC080N120SC1 mosfet equivalent, sic mosfet.
* 1200 V @ TJ = 175°C
* Typ RDS(on) = 80 mW at VGS = 20 V, ID = 20 A
* High Speed Switching with Low Capacitance
* 100% UIL Tested
* AEC−Q101 Qualifie.
* Automotive Traction Inverter
* Automotive DC−DC Converter for EV/HEV
DATA SHEET www.onsemi.com
V(BR)DSS 1200.
Silicon Carbide (SiC) MOSFET uses a completely new technology
that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Con.
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