NVC040N120SC1 - SiC MOSFET

Datasheet Summary

Description

that provide superior switching performance and higher reliability compared to Silicon.

In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.

Features

1200 V @ TJ = 175°C.
Typ RDS(on) = 40 mW at VGS = 20 V, ID = 40 A.
High Speed Switching with Low Capacitance.
100% UIL Tested.
AEC.
Q101 Qualified and PPAP Capable.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection).

ON Semiconductor

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Datasheet Details

Part number	NVC040N120SC1
Manufacturer	ON Semiconductor
File Size	173.80 KB
Description	SiC MOSFET
Datasheet	NVC040N120SC1 Datasheet
Additional preview pages of the NVC040N120SC1 datasheet.

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Full PDF Text Transcription

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Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M1, Bare Die NVC040N120SC1 Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Published: Jan 24, 2023 |