NVBG190N65S3F mosfet equivalent, n-channel mosfet.
* 700 V @ TJ = 150°C
* Typ. RDS(on) = 158 mW
* Ultra Low Gate Charge (Typ. Qg = 36 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 339 pF)
*.
* Automotive On Board Charger
* Automotive DC/DC Converter for BEV
DATA SHEET www.onsemi.com
V(BR)DSS 650 V
R.
SUPERFET® III MOSFET is onsemi’s brand−new high voltage
super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimiz.
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