NVBG150N65S3F
NVBG150N65S3F is N-Channel Power MOSFET manufactured by onsemi.
MOSFET
- Power, Single N-Channel, D2PAK-7L
650 V, 150 m W, 24 A
Description SUPERFET® III MOSFET is onsemi’s brand- new high voltage super- junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on- resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET® MOSFET’s optimized reverse recovery performance of body diode can remove additional ponent and improve system reliability.
In addition, the D2PAK 7 lead package offers Kelvin sense. This allows higher switching speeds and gives designers the ability to reduce the overall application footprint.
Features
- 700 V @ TJ = 150°C
- Typ. RDS(on) = 114 m W
- Ultra Low Gate Charge (Typ. Qg = 45 n C)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 409 p F)
- 100% Avalanche Tested
- AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free and are Ro HS pliant
Typical Applications
- Automotive On Board Charger
- Automotive DC/DC Converter for BEV
DATA SHEET .onsemi.
V(BR)DSS 650 V
RDS(ON) MAX 150 m W @ 10 V
ID MAX 24 A
Drain (TAB)
Gate (Pin 1)
Driver Source (Pin 2) Power Source (Pins 3, 4, 5, 6, 7) N- CHANNEL MOSFET
D2PAK- 7L CASE 418BJ
MARKING DIAGRAM
VBG150 N65S3F AYWWZZ
VBG150N65S3F = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of this data...
