NVBG110N65S3F - N-Channel MOSFET

Datasheet Summary

Description

SUPERFET® III MOSFET is onsemi’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

700 V @ TJ = 150°C.
Typ. RDS(on) = 93 mW.
Ultra Low Gate Charge (Typ. Qg = 58 nC).
Low Effective Output Capacitance (Typ. Coss(eff. ) = 553 pF).
100% Avalanche Tested.
AEC.
Q101 Qualified and PPAP Capable.
These Devices are Pb.
Free and are RoHS Compliant Typical.

ON Semiconductor

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Datasheet Details

Part number	NVBG110N65S3F
Manufacturer	ON Semiconductor
File Size	230.78 KB
Description	N-Channel MOSFET
Datasheet	NVBG110N65S3F Datasheet
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MOSFET - Power, Single N-Channel, D2PAK-7L 650 V, 110 mW, 30 A NVBG110N65S3F Description SUPERFET® III MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET® MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. In addition, the D2PAK 7 lead package offers Kelvin sense.

Published: Jun 28, 2022 |