NVB110N65S3F mosfet equivalent, n-channel mosfet.
* 700 V @ TJ = 150°C
* Typ. RDS(on) = 93 mW
* Ultra Low Gate Charge (Typ. Qg = 58 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 533 pF)
* .
* Automotive On Board Charger
* Automotive DC/DC Converter for HEV
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V(BR)DSS 650 V
RDS(ON) MAX .
SUPERFET® III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored .
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