Datasheet4U Logo Datasheet4U.com

NVB110N65S3F - N-Channel MOSFET

Description

SUPERFET® III MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • 700 V @ TJ = 150°C.
  • Typ. RDS(on) = 93 mW.
  • Ultra Low Gate Charge (Typ. Qg = 58 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 533 pF).
  • 100% Avalanche Tested.
  • Qualified with AEC.
  • Q101.
  • These Devices are Pb.
  • Free and are RoHS Compliant Typical.

📥 Download Datasheet

📁 Similar Datasheet

Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
NVB110N65S3F MOSFET – Power, Single N-Channel, D2PAK 650 V, 110 mW, 30 A Description SUPERFET® III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET® MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 93 mW • Ultra Low Gate Charge (Typ.
Published: |