NVB095N65S3F mosfet equivalent, n-channel mosfet.
* 700 V @ TJ = 150°C
* Typ. RDS(on) = 78 mW
* Ultra Low Gate Charge (Typ. Qg = 65 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 597 pF)
* .
* Automotive On Board Charger HEV−EV
* Automotive DC/DC Converter HEV−EV
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VDSS 650 V
RDS(ON) MA.
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored t.
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