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NTMFS5830NLT1G - Power MOSFET

Download the NTMFS5830NLT1G datasheet PDF. This datasheet also covers the NTMFS5830NL variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTMFS5830NL-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by onsemi

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NTMFS5830NL Power MOSFET 40 V, 172 A, 2.3 mW Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current TA = 25°C TA = 70°C TA = 25°C Steady State TA = 70°C TC = 25°C TC = 70°C TC = 25°C TC = 70°C tp = 10 ms IDM TJ, TSTG IS EAS PD ID PD Symbol VDSS VGS ID Value 40 ±20 28 22 3.2 2.
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