* Shielded Gate MOSFET Technology
* Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 56 A
* Max rDS(on) = 8.1 mΩ at VGS = 6 V, ID = 28 A
* 50% lower Qrr than othe.

* Primary DC-DC MOSFET
* Synchronous Rectifier in DC-DC and AC-DC
* Motor Drive
* Solar Top Bottom S.

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance wi.

NTMFS003P03P8Z

NTMFS005N10MCL

NTMFS005P03P8Z

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NTMFS015N15MC

NTMFS020N06C

NTMFS022N15MC

NTMFS034N15MC

NTMFS0D4N04XM

NTMFS0D5N03C

NTMFS0D6N03C

NTMFS0D7N04XM

NTMFS10N3D2C

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