NTMFS10N3D2C mosfet equivalent, n-channel mosfet.
* Shielded Gate MOSFET Technology
* Max rDS(on) = 3.2 mW at VGS = 10 V, ID = 67 A
* Max rDS(on) = 9 mW at VGS = 6 V, ID = 33 A
* 50% Lower Qrr than Other .
* Primary DC−DC MOSFET
* Synchronous Rectifier in DC−DC and AC−DC
* Motor Drive
* Solar
MAXIMUM RATINGS.
This N-Channel MV MOSFET is produced using
ON Semiconductor’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance wit.
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