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NTBG040N120SC1 Datasheet ON Semiconductor

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ON Semiconductor · NTBG040N120SC1 File Size : 325.92KB · 1 hits

Features and Benefits


• Typ. RDS(on) = 40 mW
• Ultra Low Gate Charge (Typ. QG(tot) = 106 nC)
• Low Effective Output Capacitance (Typ. Coss = 139 pF)
• 100% Avalanche Tested
• TJ = 175°C
• This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications
• .

NTBG040N120SC1 NTBG040N120SC1 NTBG040N120SC1
TAGS
SiC
MOSFET
NTBG040N120SC1
NTBG045N065SC1
NTBG014N120M3P
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