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NTBG040N120SC1 SiC MOSFET

NTBG040N120SC1 Description

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET * EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7 V(BR)DSS 1200 V RDS(ON) MAX 56 mW @ 20 V I.

NTBG040N120SC1 Features

* Typ. RDS(on) = 40 mW
* Ultra Low Gate Charge (Typ. QG(tot) = 106 nC)
* Low Effective Output Capacitance (Typ. Coss = 139 pF)
* 100% Avalanche Tested
* TJ = 175°C
* This Device is Halide Free and RoHS Compliant with exemption 7a, Pb
* Free 2LI (

NTBG040N120SC1 Applications

* UPS
* DC-DC Converter
* Boost Inverter MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage VDSS 1200 V Gate
* to
* Source Voltage VGS +25/
* 15 V Recommended Operation Values TC

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