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NSR0240MX - Schottky Barrier Diode

Key Features

  • Very Low Forward Voltage Drop.
  • 460 mV @ 100 mA.
  • Low Reverse Current.
  • 0.2 mA @ 25 V VR.
  • 200 mA of Continuous Forward Current.
  • Very High Switching Speed.
  • Low Capacitance.
  • CT = 7 pF.
  • This is a Pb.
  • Free Device Typical.

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Datasheet Details

Part number NSR0240MX
Manufacturer onsemi
File Size 43.75 KB
Description Schottky Barrier Diode
Datasheet download datasheet NSR0240MX Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NSR0240MX Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, clamping and protection applications in portable devices. NSR0240MX in a X2DFN2 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. Features • Very Low Forward Voltage Drop − 460 mV @ 100 mA • Low Reverse Current − 0.