NGTB15N120IHWG - IGBT

Features

a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching.

onsemi

Datasheet Details

Part number	NGTB15N120IHWG
Manufacturer	onsemi
File Size	188.02 KB
Description	IGBT
Datasheet	NGTB15N120IHWG Datasheet

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Full PDF Text Transcription

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NGTB15N120IHWG Product Preview IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications.

Published: Oct 2, 2022 |