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NGTB15N60R2FG - IGBT

Features

  • Reverse Conducting II IGBT.
  • IGBT VCE(sat)=1.85V typ. (IC=15A, VGE=15V).
  • IGBT tf=75ns typ.
  • Diode VF=1.7V typ. (IF=15A).
  • Diode trr=95ns typ.
  • 10s Short Circuit Capability.

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NGTB15N60R2FG IGBT 600V, 14A, N-Channel www.onsemi.com Features  Reverse Conducting II IGBT  IGBT VCE(sat)=1.85V typ. (IC=15A, VGE=15V)  IGBT tf=75ns typ. Diode VF=1.7V typ. (IF=15A) Diode trr=95ns typ.
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