NDSH40120CDN diode equivalent, silicon carbide schottky diode.
* Max Junction Temperature 175C
* Avalanche Rated 166 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
*.
* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits
1 23 TO−247−3LD CASE 340CX
MARKING.
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excelle.
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