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NDSH30120CDN Datasheet, ON Semiconductor

NDSH30120CDN diode equivalent, sic schottky diode.

NDSH30120CDN Avg. rating / M : 1.0 rating-11

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NDSH30120CDN Datasheet

Features and benefits


* Max Junction Temperature 175°C
* Avalanche Rated 110 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
*.

Application


* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits 12 3 TO−247−3LD CASE 340CX MARKING.

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excelle.

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TAGS

NDSH30120CDN
SiC
Schottky
Diode
NDSH10170A
NDSH25170A
NDSH40120CDN
ON Semiconductor

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