NDS0610 transistor equivalent, p-channel enhancement mode field effect transistor.
* −0.12 A, −60 V
* RDS(on) = 10 W @ VGS = −10 V
* RDS(on) = 20 W @ VGS = −4.5 V
* Voltage Controlled P−Channel Small Signal Switch
* High Density Cell.
requiring up to 120 mA DC and can deliver current up to 1 A.
This product is particularly suited to low voltage applicat.
This P−Channel Enhancement Mode Field Effect Transistors are
Produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on−state resistance, provide rugged and reliable perfor.
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