NDS0605 - P-Channel Enhancement Mode Field Effect Transistor

Product Overview

Fairchild

Part number	NDS0605
Manufacturer	Fairchild
File Size	185.04 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Datasheet	NDS0605 Datasheet
Additional preview pages of the NDS0605 datasheet.

These P-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology.

This very high density process has been designed to minimize onstate resistance, provide rugged and reliable performance and fast switching.

0.18A,.
60V. RDS(ON) = 5 Ω @ VGS =.
10 V.
Voltage controlled p-channel small signal switch.
High density cell design for low RDS(ON).
High saturation current DD SOT-23 S G Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current.
Continuous.
Pulsed (Note 1).

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Published: May 12, 2005 |